Low-noise design criteria for detector readout systems in deep submicron CMOS technology

被引：9

作者：

Manghisoni, M

Ratti, L

Re, V

Speziali, V

机构：

[1] Univ Pavia, Dipartimento Elettr, I-27100 Pavia, Italy

[2] Ist Nazl Fis Nucl, Sez Pavia, I-27100 Pavia, Italy

[3] STMicroelectronics, Studio Microelettron, I-27100 Pavia, Italy

[4] Univ Bergamo, Dipartimento Ingn, I-24044 Dalmine, BG, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 478卷 / 1-2期

关键词：

noise; deep submicron; short channel MOSFET; detector readout;

D O I：

10.1016/S0168-9002(01)01831-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper presents a study of the noise behavior of deep submicron CMOS transistors, in view of applications to analog front-end systems for high granularity detectors. The white component of the noise voltage spectrum, which is most important for fast signal processing, and the 1/f noise contribution are investigated to find low-noise design criteria concerning the choice of the polarity and of the channel length of the preamplifier input device in low-power operating conditions. This analysis is supported by experimental data from noise measurements on CMOS devices belonging to a 0.35 mum process. (C) 2002 Elsevier Science B.V, All rights reserved.

引用

页码：362 / 366

页数：5

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