The synthesis and properties of thin films based on double oxide system SiO2-ZrO2

被引：1
|
作者：
Borilo, L. P. [1 ]
Spivakova, L. N. [1 ]
机构：
[1] Natl Res Tomsk State Univ, Tomsk, Russia
来源：
RUSSIAN JOURNAL OF APPLIED CHEMISTRY | 2013年 / 86卷 / 07期
关键词：
The main physical and chemical processes involved in the preparation of SiO2-ZrO2 thin films from film-forming solutions based on zirconium oxochloride ZrOCl2·8H2O; tetraethoxysilane Si(C2H5O)4; and ethanol were studied. The phase composition; structure and physical and chemical properties of the films were determined and the diagram composition - property was constructed. © 2013 Pleiades Publishing; Ltd;
D O I：
10.1134/S1070427213070033
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
The main physical and chemical processes involved in the preparation of SiO2-ZrO2 thin films from film-forming solutions based on zirconium oxochloride ZrOCl2 center dot 8H(2)O, tetraethoxysilane Si(C2H5O)(4), and ethanol were studied. The phase composition, structure and physical and chemical properties of the films were determined and the diagram composition - property was constructed.
引用
收藏
页码：958 / 964
页数：7
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