Coherence length of high-β semiconductor microcavity lasers

被引：0

作者：

Ates, Serkan ^{[1
]}

Gies, Christopher ^{[2
]}

Ulrich, Sven M. ^{[1
]}

Wiersig, Jan ^{[2
]}

Reitzenstein, Stephan ^{[3
]}

Loeffler, Andreas ^{[3
]}

Forchel, Alfred ^{[3
]}

Jahnke, Frank ^{[2
]}

Michler, Peter ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen, D-70550 Stuttgart, Germany

[2] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany

[3] Univ Wuzburg, Lehrstuhl Tech Phys, D-97074 Wuzburg, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2 | 2009年 / 6卷 / 02期

关键词：

D O I：

10.1002/pssc.200880332

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Detailed experimental and theoretical investigations on coherence properties of high-beta (In,Ga)As/GaAs quantum dot-based microcavity lasers are presented. Power dependent micro-photoluminescence measurements on the fundamental mode of the studied micropillar cavities exhibited a smooth transition from spontaneous into stimulated emission with a strong linewidth narrowing around the onset of lasing. This is accompanied by a steep increase in the coherence time of the fundamental mode emission, as derived from first-order field correlation measurements which revealed a gradual change in the g((1)) (tau) lineshapes from Gaussian-like to more exponential. In addition, systematic coherence time measurements on various micropillars demonstrated that devices with smaller spontaneous emission coupling factor 0 reveal longer coherence time of the lasing emission. All experimental results are fully verified by an enhanced microscopic theory which describes the lasing properties of quantum dot (QD) micropillars. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：568 / +

页数：2

共 50 条

[1] Coherence properties of high-β elliptical semiconductor micropillar lasers
Ates, S.
Ulrich, S. M.
Michler, P.
Reitzenstein, S.
Loeffler, A.
Forchel, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (16)
[2] Emission characteristics, photon statistics and coherence properties of high-β semiconductor micropillar lasers
Ulrich, S. M.
Ates, S.
Michler, P.
Gies, C.
Wiersig, J.
Jahnke, F.
Reitzenstein, S.
Hofmann, C.
Loeffler, A.
Forchel, A.
[J]. ADVANCES IN SOLID STATE PHYSICS, 2008, 47 : 3 - +
[3] Microcavity semiconductor lasers
McInerney, JG
Courtney, DP
Skovgaard, PMW
Corbett, B
[J]. ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, 1997, 42 : 99 - 115
[4] Square microcavity semiconductor lasers
Yang, Yuede
Weng, Haizhong
Hao, Youzeng
Xiao, Jinlong
Huang, Yongzhen
[J]. CHINESE PHYSICS B, 2018, 27 (11)
[5] PHYSICS OF SEMICONDUCTOR MICROCAVITY LASERS
KOCH, SW
JAHNKE, F
CHOW, WW
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 739 - 751
[6] Square microcavity semiconductor lasers
杨跃德
翁海中
郝友增
肖金龙
黄永箴
[J]. Chinese Physics B, 2018, 27 (11) : 180 - 189
[7] Integrated semiconductor microcavity lasers
Huang, Yong-Zhen
Yang, Yue-De
Xiao, Jin-Long
[J]. 2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2019,
[8] Photon statistics of semiconductor microcavity lasers
Ulrich, S. M.
Gies, C.
Ates, S.
Wiersig, J.
Reitzenstein, S.
Hofmann, C.
Loeffler, A.
Forchel, A.
Jahnke, F.
Michler, P.
[J]. PHYSICAL REVIEW LETTERS, 2007, 98 (04)
[9] Lasing properties of semiconductor microcavity lasers
Wu, GH
Houlihan, J
Huyet, G
Corbett, B
Lambkin, P
[J]. OPTO-IRELAND 2002: OPTICS AND PHOTONICS TECHNOLOGIES AND APPLICATIONS, PTS 1 AND 2, 2003, 4876 : 1076 - 1083
[10] Physics of semiconductor microcavities and microcavity lasers
Kira, M
Jahnke, F
Koch, SW
[J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V, 1997, 2994 : 13 - 20

← 1 2 3 4 5 →