Backside-illumination 14μm-pixel QVGA time-of-flight CMOS imager

被引：0

作者：

Oh, Min Seok ^{[1
]}

Kong, Hae Kyung ^{[1
]}

Lee, Han Soo ^{[1
]}

Kim, Kyung Il ^{[1
]}

Bae, Kwang Hyuk ^{[1
]}

Kim, Soo Bang ^{[1
]}

Kim, Sung Kwan ^{[1
]}

Lim, Moo Sup ^{[1
]}

Ahn, Jung Chak ^{[1
]}

Kim, Tae Chan ^{[1
]}

Hiroshige, Goto ^{[1
]}

Kim, Seoung Hyun ^{[2
]}

Min, Dong Ki ^{[2
]}

Lee, Yong Jei ^{[2
]}

机构：

[1] Samsung Elect, Syst LSI, Kiheung, South Korea

[2] Samsung Elect, Semicond R&D Ctr, Hwasung, South Korea

来源：

2012 IEEE 10TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a BSI(backside-illumination) 14 mu m-pixel QVGA CMOS image sensor SOC(System On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at 850nm-wavelength is acquired by BSI structure and optimized micro-lens. The DE(Depth Error) less than 1.5% within 6m is achieved with imaging lens of f/1.2 and LED array of which the optical intensity is 0.6W/m(2) at 1m-distance. Additionally, the depth linearity is measured as that the coefficient of determination is equal to 0.9999. In order to operate under background light illumination on a scene, dual CG(Conversion Gain) scheme is implemented in each pixel.

引用

页码：325 / 328

页数：4

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