MgB2 nonlinear properties investigated under localized high rf magnetic field excitation

被引:5
|
作者
Tai, Tamin [1 ,2 ]
Ghamsari, B. G. [2 ]
Tan, T. [3 ]
Zhuang, C. G. [3 ]
Xi, X. X. [3 ]
Anlage, Steven M. [1 ,2 ]
机构
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Nanophys & Adv Mat, Dept Phys, College Pk, MD 20742 USA
[3] Temple Univ, Dept Phys, Philadelphia, PA 19122 USA
关键词
INTERMODULATION DISTORTION; MICROWAVE; SUPERCONDUCTOR;
D O I
10.1103/PhysRevSTAB.15.122002
中图分类号
O57 [原子核物理学、高能物理学];
学科分类号
070202 ;
摘要
The high transition temperature and low surface resistance of MgB2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2 at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because of the presence of the small superconducting gap in the pi band, the nonlinear response of MgB2 at low temperature is potentially complicated compared to a single-gap s-wave superconductor such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB2, as well as extrinsic sources of nonlinearity, is an urgent requirement. A localized and strong rf magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope [T. Tai et al., IEEE Trans. Appl. Supercond. 21, 2615 (2011)]. MgB2 films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that several possible mechanisms are responsible for this nonlinear response. DOI: 10.1103/PhysRevSTAB.15.122002
引用
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页数:8
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