Annealing properties of sputtered CoSi2 and sputtered and reactive sputtered TiN contacts on n-Si

被引：0
|
作者：
Eftekhari, G
机构：
[1] Electrical Engineering Department, State Univ. of New York at New Paltz, New Paltz, NY 12561-2499
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期
关键词：
rapid thermal annealing; Schottky contact; CoSi2; TiN; Si;
D O I：
10.1143/JJAP.36.66
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal stability of sputtered CoSi2 and TiN and reactive sputtered TIN contacts on n-Si were examined. It was determined that reactively sputtered contacts with 70% Ar and 30% N2 have better properties than the other two contacts. CoSi2 contacts were found stable except a sharp increase in their reverse current was observed when annealed at temperature higher than 850 degrees C.
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页码：66 / 67
页数：2
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