Rate equation analysis of high-speed photon-lifetime-modulated strongly injection-locked semiconductor ring lasers

被引：2
|
作者：
Kalagara, Hemashilpa [1 ]
Smolyakov, Gennady A. [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI | 2013年 / 8619卷
关键词：
Photon-lifetime modulation; direct modulation; optical injection locking; rate equation analysis; modulation response; modulation bandwidth enhancement; semiconductor ring lasers; monolithic integration; STRONG OPTICAL-INJECTION; SMALL-SIGNAL ANALYSIS; SURFACE-EMITTING LASER; MU-M VCSELS; 1.55-MU-M VCSELS; BANDWIDTH ENHANCEMENT; LIGHT INJECTION; RELAXATION OSCILLATION; CHIRP REDUCTION; DYNAMIC-RANGE;
D O I：
10.1117/12.2008618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel method for modulation bandwidth enhancement is presented, involving strongly injection-locked whistle-geometry semiconductor ring laser modulated through photon lifetime. Advantages of photon-lifetime modulation over conventional injection-current modulation are confirmed through numerical modeling.
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页数：11
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