A new static induction thyristor (SITh) analytical model

被引：3
|
作者：
Wang, J [1 ]
Williams, BW [1 ]
机构：
[1] Heriot Watt Univ, Dept Elect & Comp Engn, Edinburgh EH14 4AS, Midlothian, Scotland
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 1999年 / 14卷 / 05期
关键词：
modeling; power semiconductor devices;
D O I：
10.1109/63.788483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts bath device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.
引用
收藏
页码：866 / 876
页数：11
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