A new static induction thyristor (SITh) analytical model

被引：3

作者：

Wang, J ^{[1
]}

Williams, BW ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Elect & Comp Engn, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1999年 / 14卷 / 05期

关键词：

modeling; power semiconductor devices;

D O I：

10.1109/63.788483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts bath device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.

引用

页码：866 / 876

页数：11

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