A 1.4-dB-NF variable-gain LNA with continuous control for 2-GHz-band mobile phones using InGaP emitter HBTs

被引：0

作者：

Aoki, Y ^{[1
]}

Fujii, M ^{[1
]}

Ohkubo, S ^{[1
]}

Yoshida, S ^{[1
]}

Niwa, T ^{[1
]}

Miyoshi, Y ^{[1
]}

Dodo, H ^{[1
]}

Goto, N ^{[1
]}

Hida, H ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

来源：

2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We designed a continuously variable-gain low-noise-amplifier (VG-LNA) circuit with a noise figure (NF) of 1.4 dB. This VG-LNA has a diode-loaded emitter follower and a variable-current source. The diode-loaded emitter follower enables gain control without NIT degradation at the maximum gain; the variable-current source improves the linearity and widens the range of gain control. It was fabricated by using InGaP-emitter hetero bipolar transistors (HBTs) and has an NF of 1.4 dB at maximum gain, 1.95 GHz, and a 3-V supply voltage. Its maximum gain is 15 dB, its input 3rd-order-intercept-point (IIP3) at the maximum gain is 3.4 dBm, and the gain-control range is 40 dB. The obtained of NF of 1.4 dB is the lowest so far reported for a continuously controlled VG-LNA.

引用

页码：289 / 292

页数：4