Advanced FinFET Technologies: Extension Doping, Vth Controllable CMOS Inverters and SRAM

The advanced FinFET technologies including extension doping, threshold voltage controllable CMOS inverters and the beta-ratio optimized SRAMs are presented. It is experimentally found that the best extension ion implantation conditions are dose of 4x10(14) cm(-2) and tilted angle of 60 degrees. With further increasing dose, the device performance deteriorates owing to the incomplete recrystallization of amorphous regions in the thin extensions. The logic gate threshold voltage controllable single metal gate FinFET CMOS inverter constructed by a tied-gate 3-terminal (3T) PMOS and an independent double-gate 4-terminal (4T) NMOS is proposed and demonstrated. Furthermore, the FinFET SRAMs with different beta-ratios were fabricated and evaluated. The higher beta-ratio provides the large static noise margin at read condition due to the high current drivability of pull-down transistor.