One-pot synthesis of high quality CdE (E = Te, TexSe1-x, Se) nanocrystals without using pyrophoric reagents

被引:6
|
作者
Shen, Huaibin [2 ]
Niu, Jinzhong [1 ]
Wang, Hongzhe [2 ]
Li, Lin Song [2 ]
机构
[1] Henan Inst Engn, Dept Math & Phys Sci, Zhengzhou 451191, Peoples R China
[2] Henan Univ, Key Lab Special Funct Mat, Kaifeng 475004, Peoples R China
基金
中国国家自然科学基金;
关键词
Chalcogenides; CdE nanocrystals; Chemical synthesis; Photoluminescence spectroscopy; LIGHT-EMITTING-DIODES; QUANTUM DOTS; CDTE NANOCRYSTALS; CDSE; SHAPE; SIZE; ELECTROLUMINESCENCE; PRECURSOR; BRIGHT; ZNSE;
D O I
10.1016/j.matchemphys.2012.06.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality CdE (E = Te, TexSe1-xSe) nanocrystals were synthesized at relatively low temperatures (180 -200 degrees C) by the utilization of one-pot method without the use of pyrophoric reagents and alkylamines. Te dispersed in trioctylphosphine oxide (TOPO) and Se dissolved in paraffin oil were used as the chalcogen precursors, in which the use of any air-sensitive, toxic, and expensive starting materials such as trioctylphosphine (TOP) and tributylphosphine (TBP) was eliminated. Structural and optical characterizations demonstrated that high quality CdE nanocrystals were synthesized. The total synthesis cost can be saved as much as 60% when comparing with the widely used traditional TOP/TBP related methods. Also this is the first time to synthesize CdTe and CdTexSe1-x nanocrystals with one-pot method without TOP/TBP. More importantly, large scale synthesis of about 2-3 g of high quality CdE nanocrystal in one reaction was successfully conducted using this method, which is very attractive for the industrial applications of semiconductor nanocrystals. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1122 / 1127
页数:6
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