GaAs MESFET dual-gate mixer with active filter design for Ku-band applications

被引：0

作者：

Lee, CH ^{[1
]}

Han, S ^{[1
]}

Laskar, J ^{[1
]}

机构：

[1] Georgia Inst Technol, Pettit Microelect Res Ctr, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design of an active filter to suppress the LO noise, spurious and harmonics of an upconversion mixer for Ku-band(12 similar to 18GHz) applications. This filter, when combined with the dual-gate mixer, can replace the need for a balanced topology with comparable performance. The conversion loss and harmonics suppression is improved by more than 15dB and 20dB, respectively. Such a filter is more compact and flexible than the widely used balanced topology.

引用

页码：841 / 844

页数：4

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