Parametric fluorescence in oxidized aluminum gallium arsenide waveguides

被引:38
|
作者
De Rossi, A [1 ]
Berger, V
Calligaro, M
Leo, G
Ortiz, V
Marcadet, X
机构
[1] Thales Res & Technol, F-91404 Orsay, France
[2] Univ Paris 07, UFR Phys, Lab Mat & Phenomenes Quant, F-75005 Paris, France
[3] Univ Roma 3, Italian Inst Phys Matter INFM RM3, I-00146 Rome, Italy
关键词
D O I
10.1063/1.1424063
中图分类号
O59 [应用物理学];
学科分类号
摘要
Parametric fluorescence in low-loss oxidized aluminum gallium arsenide heterostructure waveguides is quantitatively analyzed. A parametric fluorescence efficiency as high as 6x10(-7) W/W has been measured in a 3.2-mm-long waveguide. This corresponds to a normalized conversion efficiency, scaled with the waveguide length, of about 1000% cm(-2) W-1, eight times higher than with LiNbO3 waveguides. This opens the perspective of a microoptical parametric oscillation threshold below 100 mW. (C) 2001 American Institute of Physics.
引用
收藏
页码:3758 / 3760
页数:3
相关论文
共 50 条
  • [1] Parametric fluorescence in oxidized AlGaAs waveguides
    Leo, G
    Berger, V
    Ow-Yang, C
    Nagle, J
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1999, 16 (09) : 1597 - 1602
  • [2] Frequency doubling and parametric fluorescence in a four-port aluminum gallium arsenide photonic chip
    Roland, I
    Borne, A.
    Ravaro, M.
    De Oliveira, R.
    Suffit, S.
    Filloux, P.
    Lemaitre, A.
    Favero, I
    Leo, G.
    OPTICS LETTERS, 2020, 45 (10) : 2878 - 2881
  • [3] PHASE ANALYSIS OF OXIDIZED GALLIUM ARSENIDE
    EIKHE, SN
    MIRONOV, KE
    INDUSTRIAL LABORATORY, 1969, 35 (04): : 510 - &
  • [4] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER
    BARCHAIM, N
    LAU, KY
    URY, I
    YARIV, A
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
  • [5] PHASE EQUILIBRIUM IN GALLIUM ARSENIDE ALUMINUM ARSENIDE SYSTEM
    MIRTSKHU.YA
    MILVIDSK.MG
    SAKVAREL.LG
    LAINER, BD
    RAKOV, VV
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR, 1971, 45 (09): : 1347 - &
  • [6] Theory of carbon complexes in gallium arsenide and aluminum arsenide
    Jones, R.
    Oberg, S.
    Materials Science Forum, 1994, 143-4 (pt 1) : 253 - 258
  • [7] RESTRUCTURING OF ALUMINUM ON GALLIUM-ARSENIDE
    MACPHERSON, AC
    DAY, HM
    IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1978, 1 (04): : 432 - 433
  • [8] Defect levels in n-type gallium arsenide and gallium aluminum arsenide layers
    Saxena, AK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (02): : 281 - 297
  • [9] FILAMENTS AS OPTICAL WAVEGUIDES IN GALLIUM-ARSENIDE LASERS
    MATTHEWS, MR
    CARLING, WP
    DYOTT, RB
    ELECTRONICS LETTERS, 1972, 8 (23) : 570 - &
  • [10] GALLIUM-ARSENIDE CLAD OPTICAL-WAVEGUIDES
    BATCHMAN, TE
    PEELER, JR
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (05) : 327 - 329