Temperature reduced direct bonding by plasma assisted wafer surface pre-treatment

被引：0

作者：

Pelzer, R ^{[1
]}

Dragoi, V ^{[1
]}

Lee, D ^{[1
]}

Kettner, P ^{[1
]}

机构：

[1] EV Grp, A-4780 Schaerding, Austria

来源：

PROCEEDINGS OF THE 7TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS. 1 AND 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As standard wafer bonding processes require typically a high temperature annealing step, this limits the use of wafer bonding. Due to the need to expand the applications field, low temperature (< 400 degrees C) wafer bonding processes were developed. One promising technology is plasma activated wafer bonding. This process consists of a plasma treatment of the substrates surfaces prior to bonding, which results in considerably decreased process temperature. Experimental results illustrating this process' benefits are presented.

引用

页码：221 / 224

页数：4

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