Temperature dependence of the first-order Raman scattering in silicon nanowires

被引：21
|
作者：
Niu, Junjie [1 ]
Sha, Jian
Yang, Deren
机构：
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[3] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源：
SCRIPTA MATERIALIA | 2006年 / 55卷 / 02期
基金：
中国国家自然科学基金;
关键词：
silicon nanowires; Raman scattering; temperature dependence;
D O I：
10.1016/j.scriptamat.2006.03.060
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Temperature dependence of the first-order Raman scattering in silicon nanowires was studied using an amended phonon confinement model. The experimental band position and linewidth both showed a better agreement with the calculated data if the temperature effect was considered. Furthermore, a slight improvement in crystal quality was observed. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：183 / 186
页数：4
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