Electron-Hole Confinement Symmetry in Silicon Quantum Dots

被引：18

作者：

Mueller, Filipp ^{[1
]}

Konstantaras, Georgios ^{[1
]}

Spruijtenburg, Paul C. ^{[1
]}

van der Wiel, Wilfred G. ^{[1
]}

Zwanenburg, Floris A. ^{[1
]}

机构：

[1] Univ Twente, NanoElect Grp, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

NANO LETTERS | 2015年 / 15卷 / 08期

基金：

欧洲研究理事会;

关键词：

quantum dots; spin qubits; quantum information processing; ambipolar transport; silicon; MOSFET; SINGLE-ELECTRON; SPIN QUBIT; OSCILLATIONS; TRANSPORT; READOUT; GATE;

D O I：

10.1021/acs.nanolett.5b01706

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report electrical transport measurements on a gate-defined ambipolar quantum dot in intrinsic silicon. The ambipolarity allows its operation as either an electron or a hole quantum dot of which we change the dot occupancy by 20 charge carriers in each regime. Electron hole confinement symmetry is evidenced by the extracted gate capacitances and charging energies. The results demonstrate that ambipolar quantum dots offer great potential for spin-based quantum information processing, since confined electrons and holes can be compared and manipulated in the same crystalline environment.

引用

页码：5336 / 5341

页数：6

共 50 条

[1] Electron-hole symmetry in quantum dots benefits quantum computing
Jarman, Sam
[J]. PHYSICS WORLD, 2023, 36 (08) : 7 - 7
[2] Optical spectra of nitride quantum dots: Quantum confinement and electron-hole coupling
Hohenester, U
Di Felice, R
Molinari, E
Rossi, F
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3449 - 3451
[3] Electron-hole excitations in CdSe quantum dots under strong and intermediate confinement conditions
Karpov, S. V.
Mikushev, S. V.
[J]. PHYSICS OF THE SOLID STATE, 2010, 52 (08) : 1750 - 1756
[4] Electron-hole excitations in CdSe quantum dots under strong and intermediate confinement conditions
S. V. Karpov
S. V. Mikushev
[J]. Physics of the Solid State, 2010, 52 : 1750 - 1756
[5] Electron-hole interaction in cylindrical quantum dots
Mughnetsyan, Vram
Movsisyan, Ashot
Kirakosyan, Albert
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2022, 144
[6] Electron-hole separation in InAs quantum dots
Park, YM
Park, YJ
Kim, KM
Song, JD
Lee, JI
[J]. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 439 - 442
[7] Electron-Hole Crossover in Graphene Quantum Dots
Guettinger, J.
Stampfer, C.
Libisch, F.
Frey, T.
Burgdoerfer, J.
Ihn, T.
Ensslin, K.
[J]. PHYSICAL REVIEW LETTERS, 2009, 103 (04)
[8] Electron-hole localization in coupled quantum dots
Troiani, F
Hohenester, U
Molinari, E
[J]. PHYSICAL REVIEW B, 2002, 65 (16) : 1 - 4
[9] Coherent electron-hole correlations in quantum dots
Jonsson, L
Steiner, MM
Wilkins, JW
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1140 - 1142
[10] Phonon-assisted radiative electron-hole recombination in silicon quantum dots
V. A. Belyakov
V. A. Burdov
D. M. Gaponova
A. N. Mikhaylov
D. I. Tetelbaum
S. A. Trushin
[J]. Physics of the Solid State, 2004, 46 : 27 - 31

← 1 2 3 4 5 →