High-frequency CMOS amplifier with improved bandwidth performance

被引：3
|
作者：
Palmisano, G [1 ]
Pennisi, S [1 ]
机构：
[1] Univ Catania, Dipartimento Elettr Elettron & Sistemist, I-95125 Catania, Italy
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 14期
关键词：
D O I：
10.1049/el:19990745
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-frequency CMOS amplifier is proposed which can be used as a gain stage in RF front-ends. The circuit is based on a traditional transconductance amplifier unconventionally arranged to achieve both accurate input biasing and single-to-differential conversion, it takes advantage of an innovative approach to greatly improve frequency performance. Owing to this technique, the operating frequency of a basic amplifier in a 0.8 mu m CMOS process could be extended from 290 to 650 MHz without affecting the gain.
引用
收藏
页码：1126 / 1127
页数：2
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