A Photonic Integrated Circuit-Based Erbium-doped Waveguide Amplifier

被引：0
|
作者：
Liu, Yang [1 ,2 ]
Qiu, Zheru [1 ,2 ]
Ji, Xinru [1 ,2 ]
Lukashchuko, Anton [1 ,2 ]
He, Jijun [1 ,2 ]
Riemensberger, Johann [1 ,2 ]
Hafermanno, Martin [3 ]
Wang, Rui Ning [1 ,2 ]
Liu, Junqiu [1 ,2 ]
Ronning, Carsten [3 ]
Kippenberg, Tobias J. [1 ,2 ]
机构：
[1] Swiss Fed Inst Technol Lausanne EPFL, Inst Phys, CH-1015 Lausanne, Switzerland
[2] Swiss Fed Inst Technol Lausanne EPFL, Ctr Quantum Sci & Engn, CH-1015 Lausanne, Switzerland
[3] Friedrich Schiller Univ Jena, Inst Solid State Phys, Max Wien Pl 1, D-07743 Jena, Germany
来源：
2022 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC) | 2022年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate an erbium-doped waveguide amplifier by erbium ion implantation in Si3N4 photonic integrated circuits, achieving 145 mW on-chip output power and more than 30 dB small-signal gain, which is on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. (C) 2022 The Author(s)
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页数：4
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