Uncooled C-band wide-band gain lasers with 32-channel coverage and-20-dBm ASE injection for WDM-PON

被引：0

作者：

Lee, EH ^{[1
]}

Bang, YC ^{[1
]}

Kang, JK ^{[1
]}

Keh, YC ^{[1
]}

Shin, DJ ^{[1
]}

Lee, JS ^{[1
]}

Park, SS ^{[1
]}

Kim, I ^{[1
]}

Lee, JK ^{[1
]}

Oh, YK ^{[1
]}

Jang, DH ^{[1
]}

机构：

[1] Samsung Elect Co, Telecommun R&D Ctr, Commun Module Lab, Gyeonggi 442600, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 5-8期

关键词：

optical communication; quantum-well (QW) lasers; semiconductor lasers; wavelength-division multiplexing (WDM);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a spectrum-sliced amplified spontaneous emission-injected wide-band gain laser covering a temperature range over 110 degrees C as well as entire 32 100-GHz-spaced channels (1533-1558 nm) in 155-Mb/s upstream transmissions over of single-mode fiber in a wavelength-division-multiplexed passive optical network. The wide-band gain laser diode employs asymmetric multiple quantum-well structure and low antireflection coating in order to widen the gain spectrum.

引用

页码：667 / 669

页数：3

共 7 条

[1] Uncooled C-band wide-band gain lasers with 32-channel coverage and -20-dBm ASE injection for WDM-PON
Communication Module Laboratory, Telecommunication R and D Center, Samsung Electronics Co., Gyeonggi-do 442-600, Korea, Republic of
IEEE Photonics Technol Lett, 2006, 5 (667-669):
[2] S-band wideband gain lasers with 32 channel coverage and launching power 2dBm for WDM-PON
Lee, EH
Keh, Y
Kang, JK
Bang, YC
Kim, YH
Hwang, SL
Shin, DJ
Park, SS
Lee, JS
Lee, JK
Oh, YK
Jang, DH
2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 621 - 624
[3] ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in a 155 Mb/s WDM-PON
Lee, JK
Lee, EH
Shin, DJ
Bang, YC
Kim, JY
Lee, JH
Kim, HS
Oh, YK
Kim, TI
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 746 - 749
[4] Coupled structure for wide-band EDFA with gain and noise figure improvements from C to L-band ASE injection
Min, B
Yoon, H
Lee, WJ
Park, N
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (05) : 480 - 482
[5] First Demonstration of a Full C-Band Tunable WDM-PON System with Novel High-Temperature DS-DBR Lasers
Pachnicke, S.
Zhu, J.
Lawin, M.
Wonfor, A.
Eiselt, M.
Penty, R. V.
Cush, R.
Turner, R.
Firth, P.
Wale, M. J.
White, I. H.
Elbers, J. -P.
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
[6] C and L band Self-seeded WDM-PON Links using Injection-locked Fabry-Perot Lasers and Modulation Averaging
Komljenovic, Tin
Babic, Dubravko
Sipus, Zvonimir
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
[7] 24 channels colorless WDM-PON with L-band 10 Gb/s downstream and C-band 2.5 Gb/s upstream using multiple-wavelengths seeding sources based on mode-locked lasers
Nguyen, Q. T.
Bramerie, L.
Besnard, P.
Shen, A.
Garreau, A.
Kazmierski, C.
Duan, G. H.
Simon, J. C.
2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC, 2010,

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