Band tailing and efficiency limitation in kesterite solar cells

被引:553
|
作者
Gokmen, Tayfun [1 ]
Gunawan, Oki [1 ]
Todorov, Teodor K. [1 ]
Mitzi, David B. [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
VOLTAGE;
D O I
10.1063/1.4820250
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)(2) devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices. (C) 2013 AIP Publishing LLC.
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页数:5
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