Analytical Modelling of an Asymmetric Pocket Implanted n-Channel MOSFETs

被引：0

作者：

Islam, S. M. Naeemul ^{[1
]}

Khan, M. Ziaur Rahman ^{[2
]}

机构：

[1] Bangladesh Univ Engn & Technol, Inst Informat & Commun Technol, Dhaka 1000, Bangladesh

[2] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

来源：

2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE) | 2012年

关键词：

Short Channel Effect (SCE); Drain Induced Barrier Lowering (DIBL); Large Scale Integration (LSI); Deep Lightly Doped Drain (DLDD);

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Analytical model for surface potential of a pocket implanted asymmetric n-channel MOSFET device has been derived upon solving one dimensional Poisson's equation. The continuity of potential and electric field in lateral direction is satisfied and appropriate boundary conditions are used while deriving the model. The dependence of the surface potential on different device parameters and biasing conditions has also been studied. The result of the proposed model is compared with the data available in the literature and good agreement was obtained.

引用

页数：4

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