Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As

被引：46
|
作者：
Kobayashi, M. [1 ]
Chen, P. T. [2 ]
Sun, Y. [3 ]
Goel, N. [4 ]
Majhi, P. [5 ]
Garner, M. [4 ]
Tsai, W. [4 ]
Pianetta, P. [1 ,3 ]
Nishi, Y. [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94305 USA
[4] Intel Corp, Santa Clara, CA 95052 USA
[5] SEMATECH, Intel Asiignee, Austin, TX 78741 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期
关键词：
aluminium compounds; annealing; atomic layer deposition; conduction bands; gallium arsenide; hafnium compounds; high-k dielectric thin films; III-V semiconductors; indium compounds; photoelectron spectra; semiconductor-insulator boundaries; surface chemistry; surface cleaning; valence bands;
D O I：
10.1063/1.3020298
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The synchrotron radiation photoemission spectroscopic study was conducted to (a) investigate the surface chemistry of In0.53Ga0.47As and In0.52Al0.48As postchemical and thermal treatments, (b) construct band diagram, and (c) investigate the interface property of HfO2/In0.53Ga0.47As and HfO2/In0.52Al0.48As. Dilute HCl and HF etch remove native oxides on In0.53Ga0.47As and In0.52Al0.47As, whereas in situ vacuum annealing removes surface arsenic pileup. After the atomic layer deposition of HfO2, native oxides were considerably reduced compared to that in as-received epilayers, strongly suggesting the self-clean mechanism. Valence and conduction band offsets are measured to be 3.37 +/- 0.1 and 1.80 +/- 0.3 eV for In0.53Ga0.47As and 3.00 +/- 0.1 and 1.47 +/- 0.3 eV for In0.52Al0.47As, respectively.
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页数：3
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