GaSb-based monolithic EP-VCSEL emitting above 2.5 μm

被引：4
|
作者：
Ducanchez, A. [1 ]
Cerutti, L. [1 ]
Grech, P. [1 ]
Genty, F. [1 ]
机构：
[1] Univ Montpellier 2, Inst Elect Sud, UMR 5214, CNRS, F-34095 Montpellier 5, France
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 23期
关键词：
D O I：
10.1049/el:20082845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first electrically-pumped GaSb-based vertical cavity surface emitting lasers emitting above 2.5 mu m at room temperature are reported. This monolithic all-epitaxial structure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. Devices with a diameter of 30 mu m operate in quasi-CW ( 1 mu s, 5%) at 2.52 mu m above 300 K. A minimum threshold current of 4.7 kA/cm(2) in pulsed operation (100 ns, 0.5%) was obtained at 251 K with these devices.
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页码：1357 / +
页数：2
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