Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing

被引：22
|
作者：
Zhang, J. J. [1 ]
Rastelli, A. [1 ,2 ]
Schmidt, O. G. [1 ]
Scopece, D. [3 ,4 ]
Miglio, L. [3 ,4 ]
Montalenti, F. [3 ,4 ]
机构：
[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[2] Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[3] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
[4] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 08期
关键词：
GROWTH; COHERENT; DOTS; MECHANISMS; STABILITY; GE;
D O I：
10.1063/1.4818717
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally oriented bundles, during in situ annealing of a few monolayers of Ge on Si(001). Results are interpreted in terms of a collective wave-propagation mechanism, previously suggested for interpreting ripple faceting on Ge/Si(1110) surfaces. Quantitative agreement between experiments and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total density can be controlled by carefully tuning the growth parameters. (C) 2013 AIP Publishing LLC.
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页数：5
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