共 50 条
- [1] The modified k.p method to investigate polarization effects in nitride quantum-well devices [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 25 (04): : 504 - 514
- [2] Tunnelling in quantum well optoelectronic devices [J]. PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 192 - 195
- [3] CONDUCTION SUBBANDS IN A GAAS/ALXGA1-XAS QUANTUM-WELL - COMPARING DIFFERENT K.P MODELS [J]. PHYSICAL REVIEW B, 1992, 46 (23): : 15382 - 15386
- [4] Variational Formulation of Stable Discrete k.p Models [J]. 18TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2015), 2015,
- [5] Improvement of the k.p Approach for Describing Silicon Quantum Dots [J]. PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 124 - 127
- [6] Polarization insensitive quantum well optoelectronic devices using quantum well shape modification [J]. EMERGING COMPONENTS AND TECHNOLOGIES FOR ALL-OPTICAL PHOTONIC SYSTEMS II, 1997, 2918 : 184 - 192
- [7] SUPERLATTICE K.P MODELS FOR CALCULATING ELECTRONIC-STRUCTURE [J]. PHYSICAL REVIEW B, 1988, 38 (18): : 13095 - 13098
- [10] GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices [J]. PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 61 - +