Thickness-Controlled Wafer-Scale Single-Crystalline MAPbBr3 Films Epitaxially Grown on CsPbBr3 Substrates by the Droplet-Evaporated Crystallization Method

The perovskite single-crystalline thin films, which are free of grain boundaries, would be highly desirable in boosting device performance due to their high carrier mobility, low trap density, and large carrier diffusion length. Herein, a facile room-temperature approach to epitaxially grow MAPbBr(3) single-crystalline films on CsPbBr3 substrates by the droplet-evaporated crystallization method is reported. A large-area continuous MAPbBr(3) single-crystal film about 15 x 15 mm(2) in size has been heteroepitaxially grown on CsPbBr3 substrates. The surface morphology, composition, and single crystallinity were characterized by a scanning electron microscope, an energy-dispersive spectrometer, an electron probe microanalyzer, and high-resolution X-ray diffractions, respectively. The thickness of the films could be adjusted from 1 to 18 mu m by varying the concentration of the solution from 10 to 50 wt %. The epitaxial relationship of MAPbBr(3) (010)parallel to CsPbBr3 (010), MAPbBr(3) [101]parallel to CsPbBr3 [200] was authenticated using XRD, pole figure, and TEM. The low defect density of 4.6 x 10(11) cm(-3) and high carrier mobility of 261.94 cm(2) V-1 s(-1) of the MAPbBr(3) film measured by the SCLC method are comparable to those of bulk single crystals. An on/off ratio of similar to 113 was achieved according to current-voltage curves. Our research demonstrates the first large-area single-crystal heterojunction of a hybrid perovskite with an all-inorganic perovskite, which may show unique properties in optoelectronic applications.