The Magnetic Ordering of SiCN films prepared by Ion Implantation

Room-temperature ferromagnetism was observed in the SiCN films prepared by ion implantation. The result indicates that N ion implantation dosage in the film has great effect on the observed room-temperature ferromagnetism of the films. Along with the increase of ion implantation dosage, the N ions increase and the magnetism enhances. Because of the ion implantation will cause a lot of defects on the surface of SiC films, which will induce a lot of vacancies. The C atoms are replaced by the N ions doped, the concentration of the N ions decides the charges states and spin polarizations of Si vacancy defects. Local magnetic moment is induced because of the spin polarization of the Si vacancy defects, and the films show ferromagnetic properties. Charge states and spin polarizations of silicon vacancy defects can be manipulated by N atoms which induces the ferromagnetism.