Optical properties of ordered as layers on InP(110) surfaces

被引：35
|
作者：
Santos, PV
Koopmans, B
Esser, N
Schmidt, WG
Bechstedt, F
机构：
[1] TECH UNIV BERLIN, INST FESTKORPERPHYS, D-10623 BERLIN, GERMANY
[2] UNIV JENA, INST FESTKORPERTHEORIE & THEORET OPT, D-07743 JENA, GERMANY
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.77.759
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The structure of arsenic monolayers on InP(110) surfaces has been investigated by combining optical spectroscopy with calculations of the surface atomic structure and optical properties. A highly ordered surface structure is obtained after As deposition at room temperature followed by annealing at 300 degrees C. From the excellent agreement between the experimental and theoretical results we conclude that the ordered structure consists of an InAs monolayer on the substrate surface.
引用
收藏
页码：759 / 762
页数：4
相关论文
共 50 条
  • [1] OPTICAL ANISOTROPY OF ORDERED SB LAYERS ON III-V (110) SURFACES
    ESSER, N
    RICHTER, W
    RESCHESSER, U
    CHIARADIA, P
    GOLETTI, C
    MORETTI, L
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (03): : 507 - 519
  • [2] OPTICAL-PROPERTIES OF SB-TERMINATED GAAS AND INP(110) SURFACES
    SANTOS, PV
    ESSER, N
    CARDONA, M
    SCHMIDT, WG
    BECHSTEDT, F
    PHYSICAL REVIEW B, 1995, 52 (16) : 12158 - 12167
  • [3] PROPERTIES OF INP(110) SURFACES, INP(110)-AG INTERFACES AND INP(110)-AG SCHOTTKY DIODES - CONTRIBUTION OF THE TEMPERATURE
    DUMAS, M
    BENKACEM, M
    PALAU, JM
    LASSABATERE, L
    SURFACE SCIENCE, 1987, 189 : 315 - 321
  • [4] Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces -: art. no. 035319
    Tütüncü, HM
    Srivastava, GP
    PHYSICAL REVIEW B, 2002, 65 (03) : 1 - 12
  • [5] Optical properties of InSb layers confined by InP
    Utzmeier, T
    Armelles, G
    Postigo, PA
    Briones, F
    PHYSICAL REVIEW B, 1997, 56 (07): : 3621 - 3623
  • [6] Optical properties of InSb layers confined by InP
    Utzmeier, T.
    Armelles, G.
    Postigo, P. A.
    Briones, F.
    Physical Review B: Condensed Matter, 56 (07):
  • [7] Optical properties of sexithiophene films grown on ordered and disordered TiO2(110) surfaces
    Cerminara, M.
    Tubino, R.
    Meinardi, F.
    Ivanco, J.
    Netzer, F. P.
    Ramsey, M. G.
    THIN SOLID FILMS, 2008, 516 (12) : 4247 - 4251
  • [8] ELECTRONIC STATES OF In/InP (110) AND P/InP (110) SURFACES.
    Xu, Zhizhong
    Shen, Jingzhi
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1986, 7 (05): : 555 - 557
  • [9] Optical properties of ordered mesoporous layers of silica
    Cheyssac, P
    Klotz, M
    Sondergård, E
    THIN SOLID FILMS, 2006, 495 (1-2) : 237 - 242
  • [10] GROWTH OF ASYMMETRIC LAYERS ON INP(110)
    TULKE, A
    LUTH, H
    SURFACE SCIENCE, 1989, 211 (1-3) : 1001 - 1011
12345