Comparison of the grain growth behavior and defect structures of flash sintered ZnO with and without controlled current ramp

被引：49

作者：

Phuah, Xin Li ^{[1
]}

Wang, Han ^{[1
]}

Charalambous, Harry ^{[2
]}

Jha, Shikhar Krishn ^{[2
]}

Tsakalakos, Thomas ^{[2
]}

Zhang, Xinghang ^{[1
]}

Wang, Haiyan ^{[1
,3
]}

机构：

[1] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

[2] Rutgers State Univ, Dept Mat Sci & Engn, New Brunswick, NJ 08901 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

SCRIPTA MATERIALIA | 2019年 / 162卷

关键词：

Flash sintering; Controlled current ramp; ZnO; Microstructure; TEM; ELECTRIC-FIELD; THERMAL RUNAWAY; TEMPERATURE; ZIRCONIA; TITANIA; DENSIFICATION; REDUCTION; MOBILITY;

D O I：

10.1016/j.scriptamat.2018.11.009

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

During the flash sintering of ceramics, rapid densification occurs during the non-linear increase in current. To investigate the effect of an abrupt increase in current, a detailed microstructure characterization of flash sintered ZnO samples has been conducted and compared to a sample with controlled current ramp (i.e linear increase of current). It has been found that the rapid densification during flash sintering limits the grain growth leading to finer grain sizes compared to the sample with a controlled current ramp. Stacking faults have been observed in the microstructure of both samples due to the generation of point defects. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：251 / 255

页数：5

共 2 条

[1] Microstructural and electrical properties of flash sintered ZnO-Bi2O3-Sb2O3 based varistors: Effect of current density with a controlled current ramp
Amini, Akbar
Rajabi, Marjan
Zahraee, Seyed Mohammad
MATERIALS CHEMISTRY AND PHYSICS, 2023, 295
[2] Grain growth behavior, surface morphology evolution, structures, and optical properties of ZnO thin films prepared by RF reactive magnetron sputtering
Lu, Hui
Zheng, Zhi-Jia
Lin, Xian
Xu, Fei
Bi, Han
Laaksonen, Aatto
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (1-2): : 170 - 175

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