Effect of Annealing and Barrier Thickness on MgO-Based Co/Pt and Co/Pd Multilayered Perpendicular Magnetic Tunnel junctions

被引：18
|
作者：
Ye, Li-Xiu [1 ]
Lee, Ching-Ming [1 ,2 ]
Syu, Jhin-Wei [1 ,3 ]
Wang, Yi-Rung [1 ]
Lin, Kun-Wei [4 ]
Chang, Yu-Hsiu [4 ]
Wu, Te-ho [1 ,2 ,3 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Taiwan SPIN Res Ctr, Touliu 64002, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Touliu 64002, Taiwan
[3] Natl Yunlin Univ Sci & Technol, Grad Sch Optoelect, Touliu 64002, Taiwan
[4] Ind Technol Res Inst, Laser Applicat Technol Ctr, Tainan 734, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2008年 / 44卷 / 11期
关键词：
Co/Pd; Co/Pt; MgO; perpendicular magnetic tunnel junction (pMTJ); tunneling magnetoresistance (TMR);
D O I：
10.1109/TMAG.2008.2001648
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the effects of annealing conditions on the magnetic characteristics of multilayered perpendicular magnetic tunnel junctions (pMTJ) of the structures SiNx/Pt/(Co/Pd)(10)/MgO/(Co/Pt)(5)/Pt with various MgO barrier thicknesses were explored. We found that both the fixed and free layers exhibit coercivity growth with increasing annealing temperature. Insertion of a 0.4 nm Mg layer under the MgO barrier layer increases the corecivities further. Magnetoresistance measured by the current-in-plane tunneling (CIPT) method reveals that the insertion of Mg layers on both side of the MgO layer can increase the MR ratio by up to 32%.
引用
收藏
页码：3601 / 3604
页数：4
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