Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

被引：5
|
作者：
Pashkin, YA
Pekola, JP
Kuzmin, LS
机构：
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] Chalmers, Dept Phys, S-41296 Gothenburg, Sweden
[3] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期
关键词：
D O I：
10.1116/1.590769
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics. (C) 1999 Almerican Vacuum Society. [S0734-211X(99)06204-6].
引用
收藏
页码：1413 / 1416
页数：4
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