Parametric Dispersion and Amplification Characteristics of Hot Electron Driven Diffusive Semiconductor Plasmas

In this paper, an analytical expression for hot electron driven diffusion induced second-order susceptibility is obtained under non-resonant laser irradiation in magnetised semiconductor plasma. The hot electron effect due to intense pump modifies the momentum transfer collision frequency and diffusion coefficient which in turns enhances the dispersion as well as gain of the medium. The analysis deals with the qualitative behaviour of the anomalous parametric dispersion and the gain profile of the n-InSb semiconductor plasma.