High-temperature diffusion doping of porous silicon carbide

被引：5
|
作者：
Mynbaeva, M. G. [1 ]
Mokhov, E. N. [1 ]
Lavrent'ev, A. A. [1 ]
Mynbaev, K. D. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 09期
关键词：
61.43.Gt; 66.30.J-; 61.72.U-;
D O I：
10.1134/S1063785008090034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The results of experiments on high-temperature (2000-2200 degrees C) diffusion doping of porous silicon carbide (PSC) by vanadium and erbium are reported. It is established that the specific features of diffusion processes in PSC at these temperatures are determined by modification of the porous structure due to the transport of vacancies. Based on a comparison of these results to available data on the low-temperature (900-1000 degrees C) diffusion, it is concluded that the mechanisms of diffusion in PSC at low and high temperatures are different and that SiC with a porous structure is an effective medium particularly for low-temperature diffusion.
引用
收藏
页码：731 / 733
页数：3
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