Reflective mask for projection lithography operating at a wavelength of 13.5 nm

被引：1
|
作者：
Gusev, S. A. [1 ]
Zuev, S. Yu. [1 ]
Klimov, A. Yu. [1 ]
Pestov, A. E. [1 ]
Polkovnikov, V. N. [1 ]
Rogov, V. V. [1 ]
Salashchenko, N. N. [1 ]
Skorokhodov, E. V. [1 ]
Toropov, M. N. [1 ]
Chkhalo, N. I. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2012年 / 6卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Geometrical characteristics - Line Edge Roughness - Mask manufacturing - Multilayer interference - Operating wavelength - Projection lithography - Reflective masks - Russian Academy of Sciences;
D O I：
10.1134/S1027451012070075
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This work is devoted to the technology of mask manufacturing and investigation of the characteristics of the reflective mask employed in the extreme ultraviolet lithography test bench designed at the Institute for Physics of Microstructures, Russian Academy of Sciences. The mask's structure and composition have been optimized. The antireflecting (absorbing) coating and stop-layer materials that are used to etch the mask structure and the multilayer interference system, which reflects radiation at the operating wavelength, have been selected. The mask manufacturing technology is described. The measured reflective and geometrical characteristics of a mask (absorbing layer thicknesses, line widths, and line-edge roughnesses) are presented. A new direct method for certifying mask defects of 30 nm or more is proposed.
引用
收藏
页码：568 / 573
页数：6
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