InAsSbP/InAsSb/InAs laser diodes (lambda=3.2 mu m) grown by low-pressure metal-organic chemical-vapor deposition

We report metal-organic chemical-vapor deposition-grown double heterostructure InAsSbP/InAsSb/InAs diode lasers emitting at 3.2 mu m operating at temperatures up to 220 K with threshold current density of 40 A/cm(2) at 77 K and characteristic temperature up to 42 K. Output powers as high as 260 mW in pulse mode and 60 mW in continuous wave operation have been obtained from an uncoated 100 mu m stripe-width broad-area laser at 77 K. Comparison with theory shows that there is no significant nonradiative recombination mechanism for these lasers at 77 K. (C) 1997 American Institute of Physics.