Advances in surface passivation and emitter optimization techniques of c-Si solar cells

被引:50
|
作者
Rahman, Mohammad Ziaur [1 ]
机构
[1] Ahsanullah Univ Sci & Technol, Dept Elect & Elect Engn, Dhaka 1208, Bangladesh
来源
关键词
Solar cell; Passivation; Emitter; Efficiency; c-Si; THROUGHPUT ION-IMPLANTATION; SILICON-NITRIDE;
D O I
10.1016/j.rser.2013.11.025
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
This paper discussed advances in several suitable passivation schemes and emitter optimization techniques available up to date. c-Si endowed with numerous crystal defects and impurities which are responsible for lower efficiency of solar cells made out of it. The surface passivations and emitter formations are the two inevitable processes to upgrade the solar cells efficiency by circumventing several induced effects due to associated crystal defects and impurities of c-Si. This work will act as a common place for the solar cell researchers, engineers and for the students to get the very recent results of surface passivation and emitter optimization techniques practiced both in the industries and R&D laboratories over the world. Key issues here to be considered while agglomerating the relevant information for each process step are the cost-effectiveness, added complexity, additional benefits, reliability, and efficiency potential. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:734 / 742
页数:9
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