Reliability Comparison on Self-Aligned Via and Punch-Through Via Etch Methods of Hard-Mask Based Cu/Ultra Low-K Interconnects

被引：0
|
作者：
Zhou, Jie [1 ]
Gan, Zhenghao [1 ]
Hu, Minda [1 ]
Bai, Fanfei [1 ]
Zhou, Lei [1 ]
机构：
[1] Semicond Mfg Int Corp, Technol Res & Dev, Pudong New Area, Shanghai 201203, Peoples R China
来源：
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年
关键词：
punch through (PT); Self align via (SAV);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper reliability performance of two all-in-one etch methods, self-aligned via (SAV) and punch-through (PT), has been investigated in detail. The breakdown voltage (Vbd) has been dramatically improved with the SAV etch method. However, electromigration (EM) performance has showed similar to 50% degradation. On the other hand, no degradation was found in stress migration (SM) performance. The underlying mechanisms for the reliability difference are detailed.
引用
收藏
页码：221 / 223
页数：3
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