Infrared characteristics of VO2 thin films for smart window and laser protection applications

被引：84
|
作者：
Huang, Zhangli [1 ]
Chen, Sihai [1 ]
Lv, Chaohong [1 ]
Huang, Ying [1 ]
Lai, Jianjun [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 19期
基金：
美国国家科学基金会;
关键词：
TRANSITION; TEMPERATURE;
D O I：
10.1063/1.4766287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vanadium dioxide (VO2) films with a low semiconductor-to-metal transition temperature of 45 degrees C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO2 grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO2 film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO2 thin film is a promising material for the application in related fields. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766287]
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页数：4
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