Design of a 4-6GHz Wideband LNA in 0.13μm CMOS Technology

被引:0
|
作者
Arshad, Sana [1 ]
Zafar, Faiza [1 ]
Wahab, Qamar-ul [1 ]
机构
[1] NED Univ Engn & Technol, Dept Elect Engn, Karachi 75270, Pakistan
关键词
AMPLIFIER;
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design of a single ended wideband LNA utilizing reactive elements at the input and output for impedance matching. It has been shown through simulations that the LNA architecture utilizes components similar to a narrowband design but achieves a much wider bandwidth with high gain and low noise figure. The single ended wideband LNA is based on 0.13-mu m CMOS technology from IBM and simulated in Cadence SpectreRF. The LNA operates for frequencies approximately between 4-6 GHz. The maximum gain of the LNA is 29.6 dB and average NF is 2.6 dB. The linearity analysis shows the input referred P1dB and IIP3 of -25.07 dBm and -13.47 dBm respectively. The two stage wideband LNA consumes only 13.9 mA from a 1.5 V supply. It shows good comparison with other LNAs designed for 4-6 GHz range with a much higher gain and smaller NF.
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页码:125 / 129
页数:5
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