Writing magnetic memory with ultrashort light pulses

被引:187
|
作者
Kimel, Alexey V. [1 ,2 ]
Li, Mo [3 ,4 ]
机构
[1] Radboud Univ Nijmegen, Inst Mol & Mat, Nijmegen, Netherlands
[2] Russian Technol Univ MIREA, Moscow, Russia
[3] Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA
[4] Univ Washington, Dept Phys, Seattle, WA 98195 USA
关键词
REVERSAL; FILMS;
D O I
10.1038/s41578-019-0086-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Laser pulses are the shortest stimulus known to control the magnetization of materials and to switch magnetic devices on the picosecond to femtosecond timescales. Femtosecond laser pulses have been able to trigger the fastest changes in the magnetic state of matter, and thus these pulses may lead to technologies with increased speed and energy efficiency of magnetic data storage and memory. In the past decade, materials enabling optical control of magnetism and concepts of devices employing such opto-magnetic phenomena have been shown. In this Review, we explore ultrafast all-optical switching (AOS) of magnetization as the least-dissipative and fastest method for magnetic writing. We outline the physical processes responsible for mechanisms of AOS, define the materials suitable for optical control of magnetism and test these mechanisms and materials against three important criteria of recording: speed, accompanying dissipations and scalability. In particular, we emphasize that switching magnetization with the help of light outperforms other methods in terms of the speed of the write-read magnetic recording event (less than 20 ps) and the unprecedentedly low heat load (< 6 J cm(-3)). Finally, we outline the integration of AOS in spintronic devices and the perspective of large-scale integration towards magnetic random access memory and other memory applications with low-energy dissipations.
引用
收藏
页码:189 / 200
页数:12
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