De Haas-van Alphen effect in a two-dimensional electron system

被引：2
|
作者：
Schwarz, MP
Grundler, D
Rolff, H
Wilde, M
Groth, S
Heyn, C
Heitmann, D
机构：
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
magnetization; GaAs; two-dimensional electron system; de Haas-van Alphen effect;
D O I：
10.1016/S1386-9477(01)00287-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
With specially designed micromechanical cantilevers we have measured the magnetization of two-dimensional electron systems formed in an integrated single-layered AlGaAs/GaAs heterojunction. In samples of different mobility we have observed sawtooth-like de Haas-van Alphen oscillations which are evaluated with respect to the effect of the weak disorder. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：140 / 143
页数：4
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