Energetic evidence for mixed dimer growth on the Si(001)/Ge(2x1) surface

被引：24
|
作者：
Jenkins, SJ
Srivastava, GP
机构：
[1] Department of Physics, University of Exeter, Exeter EX4 4QL, Stocker Road
来源：
SURFACE SCIENCE | 1997年 / 377卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
density functional calculations; diffusion and migration; germanium; growth; low index single crystal surfaces; silicon; single crystal epitaxy;
D O I：
10.1016/S0039-6028(96)01505-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Recent experimental evidence has indicated that the predominant growth mode of Ge on the Si(001)(2 x 1) surface at submonolayer coverage is by the formation of mixed Si-Ge dimers. We present results of ab initio pseudopotential calculations for the half-monolayer and full-monolayer Ge covered Si(001)(2 x 1) surface. Comparison of the total energy results for these surfaces supports the picture of mixed dimer formation for the half-monolayer coverage, and limited interdiffusion at higher coverages.
引用
收藏
页码：887 / 890
页数：4
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