MEMS piezoelectric pressure sensor - modelling and simulation

被引：9
|
作者：
Kutis, Vladimir [1 ]
Dzuba, Jaroslav [2 ]
Paulech, Juraj [1 ]
Murin, Justin [1 ]
Lalinsky, Tibor [2 ]
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Ilkovicova 3, Bratislava 81219, Slovakia
[2] SAV, Inst Elect Engn, Bratislava 84104, Slovakia
来源：
MODELLING OF MECHANICAL AND MECHATRONICS SYSTEMS | 2012年 / 48卷
关键词：
MEMS pressure sensor; finite element method; piezoelectric analysis; residual stress; GAN; STRESS;
D O I：
10.1016/j.proeng.2012.09.523
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper examines the modeling and simulation of piezoelectric MEMS pressure sensor which is AlGaN/GaN based circular high electron mobility transistor (C-HEMT) structure. The influence of the residual stress plays an important role in correct modeling of MEMS piezoelectric pressure sensor. Residual stresses which were measured by micro-Raman spectroscopy are included in the model using initial stress state of the membrane. Two different geometries of MEMS piezoelectric pressure sensor are considered - circular and ring. Piezoelectric analysis of the MEMS sensor is performed by FEM code ANSYS. 2D simplified axisymmetric FEM model, which is very effective from computational time viewpoint, is verified by full 3D FEM model. The influence of position of electrode is investigated in verified 2D simplified axisymmetric FEM model. (C) 2012 Published by Elsevier Ltd.
引用
收藏
页码：338 / 345
页数：8
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