Coherent X-ray Diffraction Imaging for Strain Analysis on Single ZnO Nanorod

被引：0

作者：

Xiong, Gang ^{[1
]}

Leake, S. ^{[1
]}

Newton, M. C. ^{[1
]}

Huang, X. ^{[1
]}

Harder, R. ^{[2
]}

Robinson, Ian K. ^{[1
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] Adv Photon Source, Argonne, IL 60439 USA

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会;

关键词：

Coherent X-ray diffraction; strain; ZnO nanorod;

D O I：

10.1063/1.3666747

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain induced in nanostructure semiconductor materials can result in different electronic properties. Coherent x-ray diffraction (CXD) has emerged as a non-destructive tool for imaging of strain and defects. In this work CXD is applied on a single ZnO nanorod, diffraction patterns from Bragg reflection are used to reconstruct the strain distribution in the samples at a resolution of 40 nm.

引用

页数：2

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