Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering

被引：1
|
作者：
Su Yuan-Jun [1 ,2 ]
Xu Jun [1 ]
Zhu Ming [1 ,2 ]
Fan Peng-Hui [2 ]
Dong Chuang [1 ]
机构：
[1] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
[2] Nissin Elect Dalian Univ Technol, Joint R&D Ctr, Dalian 116024, Peoples R China
来源：
ACTA PHYSICA SINICA | 2012年 / 61卷 / 02期
关键词：
poly-Si thin films; inductively coupled plasma; magnetron sputtering; Raman scattering; AMORPHOUS-SILICON; OPTOELECTRONIC PROPERTIES; CRYSTAL SIZE; GROWTH; TEMPERATURE; MICROSTRUCTURE; MECHANISM; SPECTRA;
D O I：
10.7498/aps.61.028104
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Hydrogenated poly-crystalline silicon thin films are deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering at a temperature below 300 degrees C. The samples are characterized by X-ray diffraction, Raman scattering, transmission electron microscopy, and Fourier transform infrared spectroscopy. The relationship between hydrogen dilution ratio and the characteristic of thin film is studied systematically. The mechanism of crystallization is discussed on the basis of the results of diagnosis of plasma by Langmuir probe and optical emission spectra.
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页数：10
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共 35 条
  • [1] PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON - STUDIES OF THE GROWTH SURFACE
    ABELSON, JR
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06): : 493 - 512
  • [2] Signature of fast H atoms from cathode glow region of a dc discharge
    Bharathi, P.
    Suraj, K. S.
    Prahlad, V.
    Mukherjee, S.
    Vasu, P.
    [J]. PHYSICS OF PLASMAS, 2009, 16 (05)
  • [3] Effect of small amounts of hydrogen added to argon glow discharges: Hybrid Monte Carlo - Fluid model
    Bogaerts, Annemie
    Gijbels, Renaat
    [J]. Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 2002, 65 (05): : 1 - 056402
  • [4] Thin film silicon deposited at 100 °C by VHF PECVD: optoelectronic properties and incorporation in solar cells
    Brinza, Monica
    Rath, Jatindra K.
    Schropp, Ruud E. I.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1093 - 1096
  • [5] Chen YS, 2010, CHINESE PHYS B, V19, DOI 10.1088/1674-1056/19/8/087206
  • [6] Effective Control of Nanostructured Phases in Rapid, Room-Temperature Synthesis of Nanocrystalline Si in High-Density Plasmas
    Cheng, Qijin
    Xu, Shuyan
    Huang, Shiyong
    Ostrikov, Kostya
    [J]. CRYSTAL GROWTH & DESIGN, 2009, 9 (06) : 2863 - 2867
  • [7] Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering
    Ding, WY
    Xu, J
    Li, YQ
    Piao, Y
    Gao, P
    Deng, XL
    Dong, C
    [J]. ACTA PHYSICA SINICA, 2006, 55 (03) : 1363 - 1368
  • [8] Some theoretical aspects of hydrogen motion in a-Si:H
    Fedders, PA
    [J]. PHYSICAL REVIEW B, 2000, 61 (23): : 15797 - 15803
  • [9] Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment
    Gerbi, Jennifer E.
    Abelson, John R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)
  • [10] He B, 2006, CHINESE PHYS, V15, P866, DOI 10.1088/1009-1963/15/4/035
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