Electrical Derivative Analysis on Current Leakage in Buried-Heterostructure Lasers

被引：0
|
作者：
Shi, Hanxing [1 ]
Steib, Michael [1 ]
Matsui, Yasuhiro [1 ]
Kocot, Chris [1 ]
Roxlo, Charles [1 ]
机构：
[1] Finisar Corp, Sunnyvale, CA 94087 USA
来源：
2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018) | 2018年
关键词：
simulation; buried-heterostructure; semiconductor laser; current leakage;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A full 2-D simulation was performed to investigate electrical derivative characteristics of 1.3 mu m AlGaInAs/InP buried-heterostructure semiconductor lasers with different current leakage paths and to explain their physical root causes. The simulation results match with experimental data under several different cases, and therefore could be used as guideline to explain device performance without any destructive failure analysis. Parameters extracted from electrical derivatives could be used as screening to catch devices with inferior performance and potential reliability risk.
引用
收藏
页码：95 / 96
页数：2
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