WIDEBAND 400 W PULSED POWER GAN AMPLIFIER

被引：0
|
作者：
Poulton, M. J. [1 ]
Krishnamurthy, K. [1 ]
Martin, J. [1 ]
Landberg, B. [1 ]
Vetury, R. [1 ]
Aichele, D. [1 ]
机构：
[1] RF Micro Devices Inc, Aerosp & Def Business Grp, Greensboro, NC USA
来源：
MICROWAVE JOURNAL | 2008年 / 51卷 / 10期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 400 W pulsed output power GaN HEMT amplifier operating over the 2.9 to 3.5 GHz band (17 percent bandwidth) has been developed. Under pulsed RF drive, with 10 percent duty cycle and 100 mu s pulse width, the amplifier delivers an output power in the range of 401 to 446 W over the band, with a drain efficiency of 48 to 55 percent when biased at a drain voltage of 65 V The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm, and advanced source-connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use infrequency agile pulsed applications such as military radar, air traffic control radar and communications jamming.
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页码：130 / +
页数：5
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