High-Performance Fully Transparent Ga-doped ZnO TFTs Fabricated by RF Magnetron Sputtering

被引：0
|
作者：
Zhang, Suoming [1 ,2 ]
Tian, Yu [1 ]
Han, Dedong [1 ]
Shan, Dongfang [1 ,2 ]
Huang, Fuqing [1 ,2 ]
Wang, Shuyang [1 ,2 ]
Zhang, Xing [1 ]
Zhang, Shengdong [2 ]
Wang, Yi [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
来源：
2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication of fully transparent Ga-doped ZnO TFTs on glass. The device shows excellent performance which on-off ratio, V-t, SS, field effect mobility is 4x10(9), 3.2v, 235mV/decade, 370cm(2)/v.s, respectively. The performance is significantly improved by annealing treatment, with much steeper SS of 107mV/decade and much lower V-t of 0.7v.
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页数：2
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