Excitation and recombination processes in rare earth doped II-VI semiconductors

被引：1
|
作者：
Godlewski, M [1 ]
机构：
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
来源：
RARE EARTH DOPED SEMICONDUCTORS II | 1996年 / 422卷
关键词：
D O I：
10.1557/PROC-422-291
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：291 / 302
页数：12
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